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	A novel MOS radiation dosimeter based on the MEMS-made oxide layer
	Liu, H. ; Yang, Y. ; Zhang, J.
	2015
英文摘要	This paper reports a novel MOS dosimeter with a very thick and defect-rich oxide layer fabricated by MEMS technology. We combined deep-reactive-ion etching (DRIE), thermal oxidation and LPCVD to prepare an oxide layer of 5μm containing multiple and large interfaces. Our devices were irradiated by γ-rays of60Co at 2Gy per minute for 2hrs and thermally stimulated current (TSC) method was used to determine the readout of dosimeters. Results show that there is a peak current about 450nA, indicating a total TSC charge of 158μC and sensitivity of 5.5nC/mm2·Gy, which is 40 times the sensitivity of previous MOS dosimeters. ? 2015 IEEE.; EI; 1156-1159
语种	英语
出处	18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015
DOI标识	10.1109/TRANSDUCERS.2015.7181133
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/436765]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, H.,Yang, Y.,Zhang, J.. A novel MOS radiation dosimeter based on the MEMS-made oxide layer. 2015-01-01.

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