Study on geometry of silicon PIN radiation detector for breakdown voltage improvement | |
Liu, Hong-zhi ; Yu, Min ; Shi, Bao-hua ; Qi, Lin ; Wang, Shao-nan ; Hu, An-qi ; Du, Hong ; Wang, Jin-yan ; Jin, Yu-feng ; Yang, Bing | |
刊名 | INTERNATIONAL JOURNAL OF NANOTECHNOLOGY |
2015 | |
关键词 | PIN detector field limiting ring simulation round corner radius breakdown voltage FIELD-LIMITING RING GUARD RING JUNCTION DEVICES PLATE |
DOI | 10.1504/IJNT.2015.071786 |
英文摘要 | The silicon PIN radiation detectors are always used under high working voltages. The breakdown voltage improvement has been researched in this paper. The resistivity of the silicon is larger than 20,000 Omega cm and the thickness is 1 mm. The field plate and field-limiting ring as well as round corners are applied for comprehensive improvement. The impact of field limiting ring distance to the main junction is tested by varying the ring distance from 30 mu m to 260 mu m. The simulation research on ring distance is carried out. The round corner radius is researched by varying the radius from 30 mu m to 500 mu m.; National Key Laboratory of Nano/Micro Fabrication Technology of PKU; North China University of Technology; SCI(E); EI; ARTICLE; benedikt@126.com; yum@pku.edu.cn; 963280170@qq.com; qilinchilin@gmail.com; wsnxidian@163.com; 921655619@qq.com; duhong267@163.com; jywang@ime.pku.edu.cn; yfjin@pku.edu.cn; yangb@ncut.edu.cn; 10-12,SI; 753-760; 12 |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/436684] |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Liu, Hong-zhi,Yu, Min,Shi, Bao-hua,et al. Study on geometry of silicon PIN radiation detector for breakdown voltage improvement[J]. INTERNATIONAL JOURNAL OF NANOTECHNOLOGY,2015. |
APA | Liu, Hong-zhi.,Yu, Min.,Shi, Bao-hua.,Qi, Lin.,Wang, Shao-nan.,...&Yang, Bing.(2015).Study on geometry of silicon PIN radiation detector for breakdown voltage improvement.INTERNATIONAL JOURNAL OF NANOTECHNOLOGY. |
MLA | Liu, Hong-zhi,et al."Study on geometry of silicon PIN radiation detector for breakdown voltage improvement".INTERNATIONAL JOURNAL OF NANOTECHNOLOGY (2015). |
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