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	A surface potential based quasi-ballistic double gate MOSFET model
	Huang, Jin ; Zhang, Ganggang ; Liu, Xiaoyan ; Du, Gang
	2015
英文摘要	A double gate MOSFET model is developed with surface potential based charge model and quasi-ballistic transport based velocity model with only one extracted parameter. Compared to the traditional drift-diffusion model, the quasi-ballistic transport velocity model can describe the I-V characteristics better for sub-30nm MOSFET. Besides, a completely surface potential based charge model with both dope and inversion charge is more accurate at smaller feature size. This model is verified by numerical simulations at the end of this paper. ? 2015 IEEE.; EI; 467-470
语种	英语
出处	11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
DOI标识	10.1109/EDSSC.2015.7285152
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/436612]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Huang, Jin,Zhang, Ganggang,Liu, Xiaoyan,et al. A surface potential based quasi-ballistic double gate MOSFET model. 2015-01-01.

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