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	3D KMC reliability simulation of nano-scaled HKMG nMOSFETs with multiple traps coupling
	Li, Yun ; Lun, Zhiyuan ; Huang, Peng ; Wang, Yijiao ; Jiang, Hai ; Du, Gang ; Liu, Xiaoyan
	2015
英文摘要	This paper presents coupling characteristics of multiple traps in HKMG nMOSFETs by a 3D kinetic Monte-Carlo (KMC) simulator we developed, which includes several fully-coupled multi-physical models: trap generation/recombination, trapping/detrapping to/from channel, metal gate, and the interaction of traps. It shows that activation energy and trapping/detrapping from/to channel/gate impact on coupling of multiple traps. Interaction of traps complicates mechanism in TAT current, BTI, and RTN. ? 2015 IEEE.; EI; 148-151; 2015-October
语种	中文
出处	20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
DOI标识	10.1109/SISPAD.2015.7292280
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/436588]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Yun,Lun, Zhiyuan,Huang, Peng,et al. 3D KMC reliability simulation of nano-scaled HKMG nMOSFETs with multiple traps coupling. 2015-01-01.

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