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	Simulation of TaOX-RRAM with Ta2O5-X/TaO2-Xstack engineering
	Zhao, Y.D. ; Huang, P. ; Chen, Z. ; Liu, C. ; Li, H.T. ; Ma, W.J. ; Gao, B. ; Liu, X.Y. ; Kang, J.F.
	2015
英文摘要	An atomistic Monte-Carlo simulator of TaOX-based resistive random access memory (RRAM) with bi-layered Ta2O5-X/TaO2-Xstack is developed by considering generation/recombination (G-R) of oxygen vacancies (VO) with oxygen ions (O2-), phase transition (P-T) between Ta2O5and TaO2as well as interactions of Ta2O5-X/TaO2-Xstack. The stack induced effects involving changeable Schottky barrier (SB) at the stack interface, the evolutions of O2-and lattice oxygen (LO) in the stack and the self-compliance effect are also included in the simulator. Using the simulation tool, the resistive switching (RS) characteristics of the bi-layered TaOX-based RRAM can be reproduced. The impacts of different stack thicknesses, oxygen contents and capabilities to take redox reactions with O2-of TaO2-Xlayer on RS behaviors are simulated. The simulation results can be utilized to achieve controllable switching processes and optimized device performances. ? 2015 IEEE.; EI; 285-288; 2015-October
语种	英语
出处	20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
DOI标识	10.1109/SISPAD.2015.7292315
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/436586]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhao, Y.D.,Huang, P.,Chen, Z.,et al. Simulation of TaOX-RRAM with Ta2O5-X/TaO2-Xstack engineering. 2015-01-01.

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