Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices

doi:10.1088/1674-4926/36/11/114002

CORC > 北京大学 > 信息科学技术学院

	Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices
	Chen Yehua ; An Xia ; Wu Weikang ; Zhang Yao ; Liu Jingjing ; Zhang Xing ; Huang Ru
刊名	半导体学报（英文版）
	2015
关键词	heavy ion displacement damage bulk silicon heavy ion displacement damage bulk silicon
DOI	10.1088/1674-4926/36/11/114002
英文摘要	The radiation response of 90 nm bulk silicon MOS devices after heavy ion irradiation is experimentally investigated. Due to the random strike of the incident particle, different degradation behaviors of bulk silicon MOS devices are observed. The drain current and maximum transconductance degrade as a result of the displacement damage in the channel induced by heavy ion strike. The off-state leakage current degradation and threshold voltage shift are also observed after heavy ion irradiation. The results suggest that the radiation induced damage of sub-100 nm MOS devices caused by heavy ion irradiation should be paid attention.; EI; 中国科技核心期刊(ISTIC); 中国科学引文数据库(CSCD); 11; 30-33; 36
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/435899]
专题	信息科学技术学院软件与微电子学院
推荐引用方式 GB/T 7714	Chen Yehua,An Xia,Wu Weikang,et al. Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices[J]. 半导体学报（英文版）,2015.
APA	Chen Yehua.,An Xia.,Wu Weikang.,Zhang Yao.,Liu Jingjing.,...&Huang Ru.(2015).Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices.半导体学报（英文版）.
MLA	Chen Yehua,et al."Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices".半导体学报（英文版） (2015).