Metal contact effect on the performance and scaling behavior of carbon   nanotube thin film transistors

doi:10.1039/c6nr00876c

CORC > 北京大学 > 信息科学技术学院

	Metal contact effect on the performance and scaling behavior of carbon nanotube thin film transistors
	Xia, Jiye ; Dong, Guodong ; Tian, Boyuan ; Yan, Qiuping ; Zhang, Han ; Liang, Xuelei ; Peng, Lianmao
刊名	NANOSCALE
	2016
关键词	FIELD-EFFECT TRANSISTORS INTEGRATED-CIRCUITS NETWORK TRANSISTORS ELECTRONICS MOBILITY DENSITY ARRAYS
DOI	10.1039/c6nr00876c
英文摘要	Metal-tube contact is known to play an important role in carbon nanotube field-effect transistors (CNT-FETs) which are fabricated on individual CNTs. Less attention has been paid to the contact effect in network type carbon nanotube thin film transistors (CNT-TFTs). In this study, we demonstrate that contact plays an even more important role in CNT-TFTs than in CNT-FETs. Although the Schottky barrier height at the metal-tube contact can be tuned by the work function of the metal, similar to the case in CNT-FETs, the contact resistance (R-c) forms a much higher proportion of the total resistance in CNT-TFTs. Interestingly, the contact resistivity was found to increase with channel length, which is a consequence of the percolating nature of the transport in CNT films, and this behavior does not exist in CNT-FETs and normal 2D Ohmic conductors. Electrical transport in CNT-TFTs has been predicted to scale with channel length by stick percolation theory. However, the scaling behavior is also impacted, or even covered up by the effect of R-c. Once the contact effect is excluded, the covered scaling behavior can be revealed correctly. A possible way of reducing R-c in CNT-TFTs was proposed. We believe the findings in this paper will strengthen our understanding of CNT-TFTs, and even accelerate the commercialization of CNT-TFT technology.; National Natural Science Foundation of China [61321001]; Beijing Municipal Science & Technology Commission [Z141100003814006]; Ministry of education of China [113003A]; SCI(E); EI; PubMed; ARTICLE; liangxl@pku.edu.cn; lmpeng@pku.edu.cn; 19; 9988-9996; 8
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/433941]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xia, Jiye,Dong, Guodong,Tian, Boyuan,et al. Metal contact effect on the performance and scaling behavior of carbon nanotube thin film transistors[J]. NANOSCALE,2016.
APA	Xia, Jiye.,Dong, Guodong.,Tian, Boyuan.,Yan, Qiuping.,Zhang, Han.,...&Peng, Lianmao.(2016).Metal contact effect on the performance and scaling behavior of carbon nanotube thin film transistors.NANOSCALE.
MLA	Xia, Jiye,et al."Metal contact effect on the performance and scaling behavior of carbon nanotube thin film transistors".NANOSCALE (2016).