QQ客服 官方微博 反馈留言

	Simulation of Positive Bias Temperature Instability (PBTI) in high-k FinFET by KMC method
	Li, Yun ; Wang, Yijiao ; Jiang, Hai ; Du, Gang ; Kang, Jinfeng ; Liu, Xiaoyan
	2015
英文摘要	Positive Bias Temperature Instability (PBTI) of HfO2/metal gate n-channel bulk FinFET is simulated through a KMC method, which includes fully coupled multi-physical models under a unified framework. PBTI is simulated using electron capture/emission and trap generation/recombination. By comparing PBTI of different traps with/without generation and recombination in HfO2, it indicates that the only consideration of trap generation can result in overestimation of the threshold shift and shorten predicted lifetime. ? 2015 IEEE.; EI; 2015-June
语种	英语
出处	2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
DOI标识	10.1109/VLSI-TSA.2015.7117574
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/423517]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Yun,Wang, Yijiao,Jiang, Hai,et al. Simulation of Positive Bias Temperature Instability (PBTI) in high-k FinFET by KMC method. 2015-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。