Fabrication of Ultrasensitive Field-Effect Transistor DNA Biosensors by   a Directional Transfer Technique Based on CVD-Grown Graphene

doi:10.1021/acsami.5b03941

CORC > 北京大学 > 信息科学技术学院

	Fabrication of Ultrasensitive Field-Effect Transistor DNA Biosensors by a Directional Transfer Technique Based on CVD-Grown Graphene
	Zheng, Chao ; Huang, Le ; Zhang, Hong ; Sun, Zhongyue ; Zhang, Zhiyong ; Zhang, Guo-Jun
刊名	ACS APPLIED MATERIALS & INTERFACES
	2015
关键词	graphene field-effect transistor biosensor directional transfer technique peptide nucleic acid-DNA hybridization detection LABEL-FREE DETECTION CHEMICAL-VAPOR-DEPOSITION LARGE-AREA OXIDE HYBRIDIZATION PNA FILMS SPECTROSCOPY RECOGNITION SENSORS
DOI	10.1021/acsami.5b03941
英文摘要	Most graphene field-effect transistor (G-FET) biosensors are fabricated through a routine process, in which graphene is transferred onto a Si/SiO2 substrate and then devices are subsequently produced by micromanufacture processes. However, such a fabrication approach can introduce contamination onto the graphene surface during the lithographic process, resulting in interference for the subsequent biosensing. In this work, we have developed a novel directional transfer technique to fabricate G-FET biosensors based on chemical-vapor-deposition- (CVD-) grown single-layer graphene (SLG) and applied this biosensor for the sensitive detection of DNA. A PET device with six individual array sensors was first fabricated, and SLG obtained by the CVD-growth method was transferred onto the sensor surface in a directional manner. Afterward, peptide nucleic acid (PNA) was covalently immobilized on the graphene surface, and DNA detection was realized by applying specific target DNA to the PNA-functionalized G-PET biosensor. The developed G-FET biosensor was able to detect target DNA at concentrations as low as 10 fM, which is 1 order of magnitude lower than those reported in a previous work. In addition, the biosensor was capable of distinguishing the complementary DNA from one-base-mismatched DNA and noncomplementary DNA. The directional transfer technique for the fabrication of G-FET biosensors is simple, and the as-constructed G-FET DNA biosensor shows ultrasensitivity and high specificity, indicating its potential application in disease diagnostics as a point-of-care tool.; National Natural Science Foundation of China [21275040, 21475034, 21405037]; Natural Science Foundation of Hubei Province [2013CFA061]; SCI(E); EI; PubMed; ARTICLE; zyzhang@pku.edu.cn; zhanggj@hbtcm.edu.cn; 31; 16953-16959; 7
语种	中文
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/417205]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zheng, Chao,Huang, Le,Zhang, Hong,et al. Fabrication of Ultrasensitive Field-Effect Transistor DNA Biosensors by a Directional Transfer Technique Based on CVD-Grown Graphene[J]. ACS APPLIED MATERIALS & INTERFACES,2015.
APA	Zheng, Chao,Huang, Le,Zhang, Hong,Sun, Zhongyue,Zhang, Zhiyong,&Zhang, Guo-Jun.(2015).Fabrication of Ultrasensitive Field-Effect Transistor DNA Biosensors by a Directional Transfer Technique Based on CVD-Grown Graphene.ACS APPLIED MATERIALS & INTERFACES.
MLA	Zheng, Chao,et al."Fabrication of Ultrasensitive Field-Effect Transistor DNA Biosensors by a Directional Transfer Technique Based on CVD-Grown Graphene".ACS APPLIED MATERIALS & INTERFACES (2015).