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Electrical measurement and analysis of TSV/RDL for 3D integration
Sun, Xin ; Fang, Runiu ; Zhu, Yunhui ; Zhong, Xiao ; Bian, Yuan ; Ma, Shenglin ; Miao, Min ; Chen, Jing ; Wang, Yan ; Jin, Yufeng
2014
英文摘要In this paper, electrical measurement and analysis of TSV/RDL is carried out, to evaluate the fabrication process and get a comprehensive understanding of electrical properties of TSV/RDL interconnect structures. DC resistance, leakage current and high frequency characterization are implemented. TSV shows a spreading distribution of DC resistance, with minimum of 4.3 m??. Leakage current of TSV reaches 150nA up to 30V without breakdown. Low substrate resistivity lowers the high frequency performance of TSV. ? 2014 IEEE.; EI; 0
语种英语
DOI标识10.1109/EPTC.2014.7028399
内容类型其他
源URL[http://ir.pku.edu.cn/handle/20.500.11897/412732]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
Sun, Xin,Fang, Runiu,Zhu, Yunhui,et al. Electrical measurement and analysis of TSV/RDL for 3D integration. 2014-01-01.
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