Electrical measurement and analysis of TSV/RDL for 3D integration | |
Sun, Xin ; Fang, Runiu ; Zhu, Yunhui ; Zhong, Xiao ; Bian, Yuan ; Ma, Shenglin ; Miao, Min ; Chen, Jing ; Wang, Yan ; Jin, Yufeng | |
2014 | |
英文摘要 | In this paper, electrical measurement and analysis of TSV/RDL is carried out, to evaluate the fabrication process and get a comprehensive understanding of electrical properties of TSV/RDL interconnect structures. DC resistance, leakage current and high frequency characterization are implemented. TSV shows a spreading distribution of DC resistance, with minimum of 4.3 m??. Leakage current of TSV reaches 150nA up to 30V without breakdown. Low substrate resistivity lowers the high frequency performance of TSV. ? 2014 IEEE.; EI; 0 |
语种 | 英语 |
DOI标识 | 10.1109/EPTC.2014.7028399 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/412732] |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Sun, Xin,Fang, Runiu,Zhu, Yunhui,et al. Electrical measurement and analysis of TSV/RDL for 3D integration. 2014-01-01. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论