Research on the hydrophobicity of black silicon based on Virtual Process | |
Li, Xin ; Wang, Chen ; Sun, Guangyi ; Zhao, Xin ; Zhang, Haixia ; Lu, Guizhang | |
2012 | |
英文摘要 | In previous research, in order to simulate the 3D structure of MEMS device, we developed a software named Virtual Process which can help the designer to testify his/her design by comparing the simulation result with real requirements. As Virtual Process could only find out the difference in structure, we put forward a new method, which can compare the functions of the device to verify the simulation result. In this paper, we take hydrophobicity as an example to show the comparison between the results of simulation and experiment. The hydrophobicity is expressed by contact angle, which is measured by certain device in reality. In this case, this paper put forward a method to calculate the contact angle to verify the hydrophobicity of black silicon. Besides, we put forward a method combining micro/nano dual-scale DRIE to realize the simulation of black silicon before the calculation. As a result, the contact angle of black silicon between our calculating method and the actual value is only 7??. ? (2012) Trans Tech Publications, Switzerland.; EI; 0 |
语种 | 英语 |
DOI标识 | 10.4028/www.scientific.net/KEM.503.329 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/412380] |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Li, Xin,Wang, Chen,Sun, Guangyi,et al. Research on the hydrophobicity of black silicon based on Virtual Process. 2012-01-01. |
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