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	Numerical study on gate-All-Around tunneling FET with SiO2 core and Si shell structure
	Zhang, Xiangyu ; Zhang, Aixi ; Mei, Jinhe ; Zhang, Lining ; He, Hongyu ; He, Jin ; Chan, Mansun
	2013
英文摘要	This work presents a gate-all-around tunneling FET based on SiO2 core and Si shell structure (GAA-SOI-TFET) and demonstrates its performance characteristics via the numerical simulation method. The 3-D T-CAD numerical simulations demonstrate that this new device has steep subthreshold swing (on/Ioff ratio up to 109 orders of magnitude. It is worth noting that Ion begins to increase when SiO2 core radius exceeds a specified value (~4nm) while influence of gate oxide thickness on the device performance being an important factor.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/411767]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Xiangyu,Zhang, Aixi,Mei, Jinhe,et al. Numerical study on gate-All-Around tunneling FET with SiO2 core and Si shell structure. 2013-01-01.

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