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Research on formation mechanism of black silicon based on matter wave
Wang, Chen ; Zhu, Fuyun ; Sun, Mingzhu ; Zhang, Haixia ; Zhao, Xin
2013
英文摘要Most of research on formation mechanism of black silicon stays in the stage of experimental analysis. Consequently, it is quite difficult to perceive the mechanism of its formation process theoretically. In this paper, Quantum Mechanics is involved in our research on mechanism of how black silicon is formed in the fabrication process based on DRIE. Satisfying result is obtained through our simulation: Pillar structures with spacing raging from 500nm to 550nm can be formed when there exist particles with single momentum size in emulated experiment environment; With further efforts, more complicated pillar structures are obtained assuming that there exist particles with two sizes of momentum. By comparing with SEM image of black silicon, the simulated pillar structures are quite similar with real black silicon in both spacing and height distribution. ? 2013 Trans Tech Publications Ltd, Switzerland.; EI; 0
语种英语
DOI标识10.4028/www.scientific.net/KEM.562-565.902
内容类型其他
源URL[http://ir.pku.edu.cn/handle/20.500.11897/411726]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
Wang, Chen,Zhu, Fuyun,Sun, Mingzhu,et al. Research on formation mechanism of black silicon based on matter wave. 2013-01-01.
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