QQ客服 官方微博 反馈留言

	A simple leakage current model for polycrystalline silicon nanowire thin-film transistors
	He, Hongyu ; He, Jin ; Deng, Wanling ; Wang, Hao ; Hu, Yue ; Zhu, Xiaoan ; Zheng, Xueren
	2013
英文摘要	A simple leakage current expression is presented for the polycrystalline silicon nanowire thin-film transistors. The thermal field emission mechanism is utilized to derive the expression. The model results are compared with the experimental data at different temperatures and voltages, and good agreements are obtained. ? 2013 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/EDSSC.2013.6628090
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/410638]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Hongyu,He, Jin,Deng, Wanling,et al. A simple leakage current model for polycrystalline silicon nanowire thin-film transistors. 2013-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。