Comparison of band-to-band tunneling models in Si and Si - Ge junctions

doi:10.1088/1674-4926/34/9/092002

CORC > 北京大学 > 信息科学技术学院

	Comparison of band-to-band tunneling models in Si and Si - Ge junctions
	Jiao, Yipeng ; Wei, Kangliang ; Wang, Taihuan ; Du, Gang ; Liu, Xiaoyan
刊名	journal of semiconductors
	2013
DOI	10.1088/1674-4926/34/9/092002
英文摘要	We compared several different band-to-band tunneling (BTBT) models with both Sentaurus and the two-dimensional full-band Monte Carlo simulator in Si homo-junctions and Si - Ge hetero-junctions. It was shown that in Si homo-junctions, different models could achieve similar results. However, in the Si - Ge hetero-junctions, there were significant differences among these models at high reverse biases (over 2 V). Compared to the nonlocal model, the local models in Sentaurus underrated the BTBT rate distinctly, and the Monte Carlo method was shown to give a better approximation. Additionally, it was found that in the Si region near the interface of the Si - Ge hetero-junctions, the direct tunneling rates increased largely due to the interaction of the band structures of Si and Ge. ? 2013 Chinese Institute of Electronics.; EI; 中国科技核心期刊(ISTIC); 中国科学引文数据库(CSCD); 0; 9; 34
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/410512]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Jiao, Yipeng,Wei, Kangliang,Wang, Taihuan,et al. Comparison of band-to-band tunneling models in Si and Si - Ge junctions[J]. journal of semiconductors,2013.
APA	Jiao, Yipeng,Wei, Kangliang,Wang, Taihuan,Du, Gang,&Liu, Xiaoyan.(2013).Comparison of band-to-band tunneling models in Si and Si - Ge junctions.journal of semiconductors.
MLA	Jiao, Yipeng,et al."Comparison of band-to-band tunneling models in Si and Si - Ge junctions".journal of semiconductors (2013).