RCA microwave power bipolar transistor with excellent performance

CORC > 北京大学 > 信息科学技术学院

	RCA microwave power bipolar transistor with excellent performance
	Cai, Yong ; Zhang, Lichun ; Gao, Yuzhi ; Jin, Haiyan ; Ye, Hongfei ; Zhang, Shudan
刊名	guti dianzixue yanjiu yu jinzhanresearch and progress of solid state electronics
	2003
英文摘要	A polysilicon emitter RCA microwave transistor was fabricated to fit the power application for the first time. The device gives a performance of 6 W output, power and 10 dB gain at 3.1 GHz. Compared to normal poly-silicon emitter(HF) transistor, this device has a small temperature coefficient of hFE, and the hFE can arrive at its saturation value at a specific temperature. This characteristics of RCA transistor can suppress the effect of current crowding arisen from the nonuniform temperature distribution. The influence on high temperature annealing on the RCA transistor's temperature characteristics and microwave performance was discussed also.; EI; 0; 2; 178-182; 23
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/407856]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Cai, Yong,Zhang, Lichun,Gao, Yuzhi,et al. RCA microwave power bipolar transistor with excellent performance[J]. guti dianzixue yanjiu yu jinzhanresearch and progress of solid state electronics,2003.
APA	Cai, Yong,Zhang, Lichun,Gao, Yuzhi,Jin, Haiyan,Ye, Hongfei,&Zhang, Shudan.(2003).RCA microwave power bipolar transistor with excellent performance.guti dianzixue yanjiu yu jinzhanresearch and progress of solid state electronics.
MLA	Cai, Yong,et al."RCA microwave power bipolar transistor with excellent performance".guti dianzixue yanjiu yu jinzhanresearch and progress of solid state electronics (2003).