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	Field-effect transistors based on single-wall carbon nanotubes bundles
	Wang, XF ; Guo, A ; Guan, LH ; Shi, ZJ ; Gu, ZN ; Fu, YY ; Zhang, X ; Huang, R
	2004
关键词	carbon nanolubes bundle field-effect transistors ambipolar hysteresis CIRCUITS ROPES
英文摘要	The electric transport properties of single-walled carbon nanotubes (SWNT) bundles array have been measured. We report the fabrications and performances of nanoscale field-effect transistors (FET) based on SWNT bundles array. In additions to p-type FET, we present a new technique by which ambipolar FETs can be fabricated. The I-on/I-off ratio of ambipolar FETs approaches 5 orders of magnitude. The reasons for ambipolar character are also qualitatively discussed. Both p-type and ambipolar FETs exhibit hysteresis in their electrical characteristics.; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/406883]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, XF,Guo, A,Guan, LH,et al. Field-effect transistors based on single-wall carbon nanotubes bundles. 2004-01-01.

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