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	Investigation of nano SiC resonator
	Chen, Zhe ; Tian, Dayu ; Zhang, Guobing ; Zhang, Haixia
	2007
关键词	nano resonator Silicon Carbide high frequency high Q
英文摘要	In this paper, a nano SiC resonator with high frequency and high Q factor was developed. This resonator utilized as-deposited PECVD SiC thin film as its resonance diaphragm, a thin layer of tungsten as its upper electrode, the thickness of this combined thin film is about 680 nm. The fabrication process is simple and under low temperature (<300 degrees C), which make it could be integrated with CMOS process. Tested by a nano-based method, this SIC nano Resonator shows good resonance performance at 1.98MHz and has high Q factor about 440. Due to its material merits, this high quality nano SiC resonator could be applied in harsh environment, such as, high temperature, high pressure and erosion conditions.; Automation & Control Systems; Computer Science, Interdisciplinary Applications; Engineering, Electrical & Electronic; Engineering, Mechanical; Instruments & Instrumentation; Remote Sensing; Optics; Telecommunications; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/406492]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Chen, Zhe,Tian, Dayu,Zhang, Guobing,et al. Investigation of nano SiC resonator. 2007-01-01.

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