QQ客服 官方微博 反馈留言

	Thermal Impact on the Resistance Switching Properties in Tantalum Oxide Based RRAM
	Mao, Jun ; Cai, Yimao ; Tan, Shenghu ; Pan, Yue ; Zhang, Yaokai ; Huang, Ru
	2012
英文摘要	In this paper, the switching layer thickness and temperature impacts on resistance switching polarity of tantalum oxide (TaOx) based resistive random access memory (RRAM) have been investigated. Our results show that at room temperature unipolar behavior was activated in thick TaOx, but failed in thin TaOx, while in 280 degrees C condition thin TaOx layer RRAM can also show stable unipolar characteristics. For thick TaOx device, the unipolar behavior is attributed to more heat accumulation in thicker switching layer. In 280 degrees C condition, stable unipolar characteristic of thin TaOx device is due to extra ambient heat offered. In addition, thin TaOx RRAM with SiO2 buffer layer is also fabricated to investigate the heat accumulation impact on operation polarity of RRAM devices. These results are helpful in obtaining the insight on understanding the switching mechanism of TaOx RRAM and improve the RRAM device performance and reliability capability.; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/ICSICT.2012.6467604
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/405898]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Mao, Jun,Cai, Yimao,Tan, Shenghu,et al. Thermal Impact on the Resistance Switching Properties in Tantalum Oxide Based RRAM. 2012-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。