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	Drive current scaling properties of GOI pmosfet in nano-scale
	Du, G. ; Liu, X.Y. ; Xia, Z.L. ; Hou, D.Q. ; Kang, J.F. ; Han, R.Q.
	2004
英文摘要	Characteristics of p-channel GOI MOSFETs with gate length (Lg) ranging 20nm-130nm are simulated by a 2D self-consistent full-band MC device simulator. The drive current scaling properties are investigated. The results indicate that p channel GOI MOSFETs have favorable scaling properties in nano-scale due to the non-stationary transport near source side. But the surface roughness scattering is a critical issue that might suppress the non-stationary transport.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/329232]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Du, G.,Liu, X.Y.,Xia, Z.L.,et al. Drive current scaling properties of GOI pmosfet in nano-scale. 2004-01-01.

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