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	Selected topics on HfO2 gate dielectrics for future ULSI CMOS devices
	Li, M.F. ; Yu, H.Y. ; Hou, Y.T. ; Kang, J.F. ; Wang, X.P. ; Shen, C. ; Ren, C. ; Yeo, Y.C. ; Zhu, C.X. ; Chan, D.S.H. ; Chin, Albert ; Kwong, D.L.
	2004
英文摘要	Based on our recent investigation on HfO2 high-k gate dielectrics, we review the Hf based gate dielectric in the future ULSI CMOS devices in the following aspects: How long HfO2 can be used satisfactorily, assessed from the gate tunneling and scalability; how thin EOT can be grown technologically, assessed by interfacial layer thickness; and how high operating voltage can be employed for 10 years reliable operation, assessed by charge trapping and threshold voltage shift. ? 2004 IEEE.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/329209]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, M.F.,Yu, H.Y.,Hou, Y.T.,et al. Selected topics on HfO2 gate dielectrics for future ULSI CMOS devices. 2004-01-01.

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