Suppression study of floating body effect in SOI MOSFET&apos;s

CORC > 北京大学 > 信息科学技术学院

	Suppression study of floating body effect in SOI MOSFET's
	Xi, Xuemei ; Wang, Yangyuan
刊名	pan tao ti hsueh paochinese journal of semiconductors
	1996
英文摘要	Based on our previous floating-body-effect (FBE) model, the dependence of FBE on several device parameters was studied. The results show that lowering source/drain doping decreasing minority-carrier life time optimizing the silicon film thickness and reducing channel doping will effectively suppress the FBE, and improve breakdown voltage characteristics. The experiments corresponding to the suppression of FBE with LOD&LDS structure and channel defect engineering, etc., demonstrate the calculated analysis, thereby enabling the theoretical result's realization in CMOS/SOI technology.; EI; 0; 6; 440-445; 17
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/302632]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xi, Xuemei,Wang, Yangyuan. Suppression study of floating body effect in SOI MOSFET's[J]. pan tao ti hsueh paochinese journal of semiconductors,1996.
APA	Xi, Xuemei,&Wang, Yangyuan.(1996).Suppression study of floating body effect in SOI MOSFET's.pan tao ti hsueh paochinese journal of semiconductors.
MLA	Xi, Xuemei,et al."Suppression study of floating body effect in SOI MOSFET's".pan tao ti hsueh paochinese journal of semiconductors (1996).