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	Investigation of terahertz plasma oscillations in nano-scaled double-gate MOSFETs by Monte Carlo method
	Wang, Juncheng ; Du, Gang ; Liu, Xiaoyan
	2014
英文摘要	In this paper, we investigate the terahertz plasma oscillations in nano-scaled double-gate n-type Silicon MOSFET with 2D ensemble Monte Carlo simulation method. The effects of the drain-to-source biases, gate-to-source biases and doping levels in the source/drain regions of the devices on the terahertz plasma oscillations are considered. The relation between terahertz plasma oscillations and the channel scaling in double-gate MOSFET is also discussed. The oscillation frequency peak value as a function of doping levels exhibits a good agreement with the predictions of 2D plasma frequency. ? 2014 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2014.7021315
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295551]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Juncheng,Du, Gang,Liu, Xiaoyan. Investigation of terahertz plasma oscillations in nano-scaled double-gate MOSFETs by Monte Carlo method. 2014-01-01.

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