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	Influence of radial stress on the performance of gate-all-around Ge(110) NW FETs with HfO2 dielectric
	Xu, Honghua ; Liu, Xiaoyan ; Du, Gang ; He, Yuhui ; Fan, Chun ; Han, Ruqi ; Kang, Jinfeng
	2011
英文摘要	In this work, a simulation method from strained valence band structures to strained mobility calculation to consider a radial stress at the boundary of HfO2 gate dielectric surrounding Ge(110) nanowire is developed. The simulation implements the radial stress to strain distribution calculation via finite element method and then to valence band calculation. The radial stress at the boundary of gate dielectric pushes the valence subbands downwards in contrast with lattice mismatch strain effects between Ge NW and gate dielectric. The impact of the radial stress on the hole effective masses and density of states of HfO2 gate dielectric surrounding Ge(110) nanowire are also investigated. The potential distribution and holes density distribution are calculated by solving the 2D Poisson equation and Schrodinger equation self-consistently in NW cross section. Hole mobility is obtained by modified Kubo-Greenwood formula. Based on strained valence band structures, the hole density distribution in cross-sectional Ge(110) NW reduces with larger radial stress value. The phonon scattering-limited hole mobility in NW significantly increases as the radial stress increases. Copyright ? 2011 American Scientific Publishers All rights reserved.; EI; 0
语种	英语
DOI标识	10.1166/jnn.2011.396
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295395]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xu, Honghua,Liu, Xiaoyan,Du, Gang,et al. Influence of radial stress on the performance of gate-all-around Ge(110) NW FETs with HfO2 dielectric. 2011-01-01.

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