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	Characterization of GaN cantilevers fabricated with GaN-on-silicon platform
	Lv, J.N. ; Yang, Z.C. ; Yan, G.Z. ; Cai, Y. ; Zhang, B.S. ; Chen, K.J.
	2011
英文摘要	In this article, Gallium nitride (GaN) cantilevers integrated with AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated with a GaN-on-silicon platform, which is fully compatible with the standard HEMTs fabrication process. A type of micro-bending test was used to characterize the piezoresponse of AlGaN/GaN HEMT on the GaN cantilever. The modulation capability of the AlGaN/GaN heterostructures under different gate bias voltages for either high sensitivity or large output signals was demonstrated. A pulsed vibration measurement technique was used to evaluate the Young's modulus of the suspended GaN cantilevers, yielding a Young's modulus of ??293 GPa.; EI; 0
语种	英语
DOI标识	10.1109/MEMSYS.2011.5734443
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295392]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Lv, J.N.,Yang, Z.C.,Yan, G.Z.,et al. Characterization of GaN cantilevers fabricated with GaN-on-silicon platform. 2011-01-01.

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