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	Understanding of self-heating enhanced degradation in pLDMOSFETs by MR-DCIV method
	He, Yandong ; Zhang, Ganggang ; Zhang, Xing
	2014
英文摘要	Self-heating enhanced degradation in pLDMOSFETs was studied by non-destructive MR-DCIV method. Due to self-heating effect in pLDMOSFETs, several times larger MR-DCIV degradation per finger was observed for multi-finger devices with higher temperature rise and less channel edge heat dissipation. Our study has shown that self-heating induced degradation shared the similar trends and mechanism to NBTI. ? 2014 IEEE.; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/IPFA.2014.6898175
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295380]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Yandong,Zhang, Ganggang,Zhang, Xing. Understanding of self-heating enhanced degradation in pLDMOSFETs by MR-DCIV method. 2014-01-01.

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