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	Study on near-flatband-voltage SILC in ultra-thin plasma nitrided gate oxides
	He, Yandong ; Xu, Mingzhen ; Tan, Changhua
	2004
英文摘要	SILC has become more serious due to the aggressive scaling-down of the gate oxide thickness. In this paper, we investigate the near-flatband-voltage (NFB) SILC for both NMOS and PMOS with an EOT of ISA plasma nitrided gate oxide. The noticeable evolution of NFB SILC was observed. The generation kinetics of NFB SILC demonstrated the relationship with the density of stress-induced interface trap and the concentration of nitrogen incorporation near Si/SiO2 interface. The NFB SILC behavior of RTNO(rapid thermal oxynitride) and plasma nitrided oxide was compared in this paper. (c) 2004 IEEE.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295328]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Yandong,Xu, Mingzhen,Tan, Changhua. Study on near-flatband-voltage SILC in ultra-thin plasma nitrided gate oxides. 2004-01-01.

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