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	Nanosized tin oxide sensitive layer prepared by reactive direct current magnetron sputtering of tin
	Liu, Xiaodi ; Zhang, Dacheng ; Li, Ting ; Wei, Wang ; Dayu, Tian ; Kui, Luo
	2004
英文摘要	Gas-sensitive tin oxide film of uniformity thickness is prepared by reactive sputtering /thermal oxidation technique. That is to say, sputtering of a tin layer in an O2 and Ar mixed atmosphere followed by thermal oxidation in an O2 environment. Using this method, a layer of tin oxide is deposited on a silicon substrate with a silicon dioxide (600nm) at ambient temperature. The thermal oxidation temperature ranges from 400??C to 900??C. In this paper, the basic characteristics of the prepared nanosised tin oxide are presented. The thin films are analyzed by means of scanning electronic microscope (SEM), X-ray diffraction (XRD), photoelectron spectroscopy (XPS) and HP4145B semiconductor analyzer.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295294]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, Xiaodi,Zhang, Dacheng,Li, Ting,et al. Nanosized tin oxide sensitive layer prepared by reactive direct current magnetron sputtering of tin. 2004-01-01.

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