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	Fabrication of superhydrophobic wide-band 'black silicon' by deep reactive ion etching
	Gao, Tian-Le ; Zhang, Hai-Xia ; Zhang, Xiao-Sheng ; Sun, Guang-Yi
	2011
英文摘要	This paper presents a fabrication technology of 'Black Silicon' with superhydrophobicity and wide-band properties based on an improved deep reactive ion etching (DRIE). By optimizing the fabrication parameters, including gas flows, pressure, platen power and etching/passivation time ratio, we have obtained dense arrays of nanopillars with an average diameter of ??400 nm and height of 2-2.5 ??m. The sample surface shows completely black appearance (i.e., black silicon) after 15 - 20 minutes processing, which indicates an obviously strong light absorption. Further test indicates the optical reflectance has been reduced to below 1% over a broad wavelength range (i.e., spectrum from 200 nm to 2500 nm). Moreover, the black silicon surface shows superhydrophobicity and the static contact angle is ??157??. Double-sided black silicon surfaces are also fabricated by this improve DRIE process, and the measured optical reflectance is reduced during long-wave region and blew 4% during the whole wave length range. ? 2011 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/NEMS.2011.6017331
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295190]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Gao, Tian-Le,Zhang, Hai-Xia,Zhang, Xiao-Sheng,et al. Fabrication of superhydrophobic wide-band 'black silicon' by deep reactive ion etching. 2011-01-01.

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