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	Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation
	Feng, Xixiang ; Ren, Pengpeng ; Ji, Zhigang ; Wang, Runsheng ; Sutaria, Ketul B. ; Cao, Yu ; Huang, Ru
	2014
英文摘要	Hot carrier injection (HCI) is one of the critical de-vice degradation mechanisms, and is conventionally characterized with constant voltage stress (CVS) method. A novel voltage-step stress (VSS) methodology is pro-posed to quickly characterize HCI degradation, based on a simplified reaction-diffusion model. This wafer-level reliability qualification methodology for HCI requires only one single device, and the total test time can be con-trolled within 2 hours. Therefore, this new technique can be an effective tool for fast reliability screening for HCI during process development in the future. ? 2014 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2014.7021226
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295135]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Feng, Xixiang,Ren, Pengpeng,Ji, Zhigang,et al. Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation. 2014-01-01.

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