QQ客服 官方微博 反馈留言

	T-shaped body Silicon-on-Insulator (SOI) MOSFET
	Cao, Ji ; Li, Dingyu ; Ke, Wei ; Sun, Lei ; Han, Ruqi ; Zhang, Shengdong
	2007
英文摘要	A novel partially-depleted (PD) silicon-on-insulator (SOI) MOSFET with a T-shaped body (TSB) is proposed for the first time. Simulation results demonstrate that the proposed structure provides nano-scaled PD SOI devices with much better short channel effect immunity and sub-threshold characteristics than those of UTB SOI devices. It is also shown that the threshold voltage of proposed device can be adjusted over a wide range by changing the thickness of the low-doped channel region if a step-function channel doping profile is used. At the same time, the short channel effects of the TSB devices exhibit a week dependence on the channel thickness variation. ? 2006 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2006.306139
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295132]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Cao, Ji,Li, Dingyu,Ke, Wei,et al. T-shaped body Silicon-on-Insulator (SOI) MOSFET. 2007-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。