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	Simulating enhanced diffusion and activation of boron by atomistic model
	Yu, Min ; Zhang, Xiao ; Ren, Liming ; Ji, Huihui ; Zhan, Kai ; Huang, Ru ; Zhang, Xing ; Wang, Yangyuan ; Zhang, Jinyu ; Oka, Hideki
	2006
英文摘要	The Kinetic Monte Carlo (KMC) method has been the applicable method for the investigation on annealing process. In this paper, the simulation on both enhanced diffusion and inactivation of B is presented. The inactivation and clustering of B implanted at 0.5keV and annealed at 900??C-1200??C are correctly simulated. The model can also correctly simulate the enhanced diffusion of B introduced by ultra-low energy implantation or predoping. Analysis on the evolution of B-Si clusters in annealing is performed. ? 2006 IEEE.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294993]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yu, Min,Zhang, Xiao,Ren, Liming,et al. Simulating enhanced diffusion and activation of boron by atomistic model. 2006-01-01.

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