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	The material characterization of nickel germanosilicides on SiGe/Si substrate and the contact size effect on Schottky diodes
	Chunhui, Fan ; Xia, An ; Ru, Huang
	2008
英文摘要	The material characteristics of nickel germanosilicides are analyzed in this paper, and the contact size effect on the performance of Schottky diodes is investigated for the first time. The solid-state reaction of sandwich metal structure Ni/W/Ni on Si1-xGex(x=0.15)/Si substrate was formed by rapid thermal annealing. With the temperature increasing, the sheet resistance of the formed germaonosilicide layers decreases due to the phase change from Ni-rich germanosilicide to Ni mono-germanosilicide, which is validated by X-ray diffraction and Raman spectroscopy techniques. In addition, the electrical characteristics of the germanosilicide/Si1-xGe x Schottky contact are observed to be dependent on annealing temperatures and the size of contact holes. The sample annealed at 400??C shows lower Schottky barrier height than that annealed at 500??C, which is attributed to the phase change. It is also found that with the contact size shrinking, the Schottky barrier height(??b) decreases slightly, and the ideality factor(n) increases.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294950]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Chunhui, Fan,Xia, An,Ru, Huang. The material characterization of nickel germanosilicides on SiGe/Si substrate and the contact size effect on Schottky diodes. 2008-01-01.

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