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	Investigations on the impact of the parasitic bottom transistor in gate-all-around silicon nanowire SONOS memory cells fabricated on bulk Si substrate
	Ai, Yujie ; Huang, Ru ; Wang, Yiqun ; Zhuge, Jing ; Wu, Dake ; Wang, Runsheng ; Tang, Poren ; Zhang, Lijie ; Hao, Zhihua ; Wang, Yangyuan
	2009
英文摘要	Gate-all-around (GAA) Si nanowire SONOS memory cells (SNWMs) have been fabricated on Si substrate using fully epi-free compatible CMOS technology. A parasitic bottom SONOS memory (PBM) was formed when the SNWM was fabricated on bulk Si substrate. The impact of the PBM on the performance of the SNWM is investigated in this paper. The PBM shows a slower program speed, a faster erase speed, and worse retention characteristics than the SNWM. Therefore, the PBM severely degrades the performance of the SNWM due to its slower program speed and worse retention characteristics, and should be carefully controlled for the SNWM based on bulk Si substrate. ? The Electrochemical Society.; EI; 0
语种	英语
DOI标识	10.1149/1.3096435
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294921]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Ai, Yujie,Huang, Ru,Wang, Yiqun,et al. Investigations on the impact of the parasitic bottom transistor in gate-all-around silicon nanowire SONOS memory cells fabricated on bulk Si substrate. 2009-01-01.

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