QQ客服 官方微博 反馈留言

	An optimized fabrication of high yield CMOS-compatible silicon carbide capacitive pressure sensors
	Meng, B. ; Tang, W. ; Wang, Z.R. ; Zhang, H.X.
	2012
英文摘要	Using anodic bonding, we fabricated a silicon carbide absolute capacitive pressure sensor. Low process temperature below 430??C made the whole fabrication process CMOS compatible. Choosing gold as electrodes, good bonding between gold bottom electrode and SiC layer was available, which made the testing results agree well with the finite element method (FEM) simulations, i.e. the sensor with a square sensing membrane of 200??200 ??m 2 shows a sensitivity of 0.09494 pF/bar over a pressure range of 5 bars, while the simulation result is 0.1035pF/bar. The use of gold increased the yield of devices, for its lower strain, compared to tungsten. Additionally, owing to PECVD carbon silicon and gold's excellent corrosion resistance, this device could be used in harsh environment. ? 2012 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/NEMS.2012.6196876
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294695]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Meng, B.,Tang, W.,Wang, Z.R.,et al. An optimized fabrication of high yield CMOS-compatible silicon carbide capacitive pressure sensors. 2012-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。