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	Self-compliance unipolar resistive switching and mechanism of Cu/SiO 2/TiN RRAM devices
	Yu, D. ; Liu, L.F. ; Huang, P. ; Zhang, F.F. ; Chen, B. ; Gao, B. ; Hou, Y. ; Han, D.D. ; Wang, Y. ; Kang, J.F. ; Zhang, X.
	2012
英文摘要	CMOS compatible Cu/SiO2/TiN-based resistive random access memory (RRAM) was fabricated and investigated. Unique self-compliance unipolar resistive switching (RS) was observed, as well as good retention and uniformity of resistance states. A physical model based on formation and rupture of Cu conductive filament (CF) is proposed, considering both thermal and electrical effect, and verified by experiments. ? 2012 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/SNW.2012.6243356
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294662]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yu, D.,Liu, L.F.,Huang, P.,et al. Self-compliance unipolar resistive switching and mechanism of Cu/SiO 2/TiN RRAM devices. 2012-01-01.

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