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	Multi-level resistive switching characteristics correlated with microscopic filament geometry in TMO-RRAM
	Chen, B. ; Kang, J.F. ; Huang, P. ; Deng, Y.X. ; Gao, B. ; Liu, R. ; Zhang, F.F. ; Liu, L.F. ; Liu, X.Y. ; Tran, X.A. ; Yu, H.Y.
	2013
英文摘要	For the first time, we report that the resistive switching behaviors of the multi-level resistance states can be influenced by the operation mode. Simulations reveal that this is due to the different geometry of the conductive filament in the multi-level resistance states stemmed from the different operation mode. Based on this understanding, improved stability and uniformity of the medium resistance states during switching process are predicted and experimentally verified. ? 2013 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/VLSI-TSA.2013.6545591
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294564]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Chen, B.,Kang, J.F.,Huang, P.,et al. Multi-level resistive switching characteristics correlated with microscopic filament geometry in TMO-RRAM. 2013-01-01.

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