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	A Dynamic-Adjusting Threshold-Voltage Scheme for FinFETs low power designs
	Cui, Xiao Xin ; Ma, Kai Sheng ; Liao, Kai ; Liao, Nan ; Wu, Di ; Wei, Wei ; Li, Rui ; Yu, Dunshan
	2013
英文摘要	In this paper, a novel device/circuit co-design scheme, namely Dynamic-Adjusting Threshold-Voltage Scheme (DATS) for independent-gate mode FinFET circuits has been proposed. The main idea of this scheme is that a pair of back-gate bias of FinFETs is adjusted dynamically to change threshold voltage according to the system operating frequency and operating mode, which could optimize circuit power, especially leakage power. The experimental and simulation result shows that the leakage power dissipation reduced greatly when circuits operate at the lower frequency, and the energy-delay product of FinFET circuits is reduced by 30% approximately. ? 2013 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ISCAS.2013.6571799
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294560]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Cui, Xiao Xin,Ma, Kai Sheng,Liao, Kai,et al. A Dynamic-Adjusting Threshold-Voltage Scheme for FinFETs low power designs. 2013-01-01.

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