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	Analysis of cotton-like silica contaminants induced by oxygen containing plasma stripping of organic structures on silicon wafer
	She, D.D. ; Zhao, L.R. ; Wang, Z.Q. ; Ma, X.Y. ; Wu, W.G.
	2013
英文摘要	The issue of unwanted cotton-like silica contaminants formed in oxygen containing plasma stripping of organic sacrificial structures on Si substrates is discussed in this paper. The mechanism is developed with specific reference to three common polymer materials in oxygen plasma etching, which is an indispensable process in most MEMS/IC fabrications. The experiments support that exposed silicon, organic structure, plasma bombardment and oxygen containing environment are four essential factors; and the density and shape of the silica residues are mostly determined by the original vertical and planar dimensions of the organic structures. More experiment results manifest that the residues can be avoided or removed with proper methods. ? 2013 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/Transducers.2013.6626720
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294432]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	She, D.D.,Zhao, L.R.,Wang, Z.Q.,et al. Analysis of cotton-like silica contaminants induced by oxygen containing plasma stripping of organic structures on silicon wafer. 2013-01-01.

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