QQ客服 官方微博 反馈留言

	New observations on complex RTN in scaled high-��/metal-gate MOSFETs - The role of defect coupling under DC/AC condition
	Ren, Pengpeng ; Hao, Peng ; Liu, Changze ; Wang, Runsheng ; Jiang, Xiaobo ; Qiu, Yingxin ; Huang, Ru ; Guo, Shaofeng ; Luo, Mulong ; Zou, Jibin ; Li, Meng ; Wang, Jianping ; Wu, Jingang ; Liu, Jinhua ; Bu, Weihai ; Wong, Waisum ; Yu, Scott ; Wu, Hanming ; Lee, Shiuh-Wuu ; Wang, Yangyuan
	2013
英文摘要	The coupling effect between multi-traps in complex RTN is experimentally studied in scaled high-??/metal-gate MOSFETs for the first time. By using extended STR method, the narrow 'test window' of complex RTN is successfully expanded to full VG swing. Evident defect coupling can be observed in both RTN amplitude and time constants. Interesting nonmonotonic bias-dependence of defect coupling is found, which is due to two competitive mechanisms of Coulomb repulsion and channel percolation conduction. The decreased defect coupling is observed with increasing AC frequency. Based on the new observations on complex RTN, its impacts on the circuit stability are also evaluated, which show an underestimation of the transient performance if not considering defect coupling. The results are helpful for future robust circuit design against RTN. ? 2013 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/IEDM.2013.6724731
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294426]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Ren, Pengpeng,Hao, Peng,Liu, Changze,et al. New observations on complex RTN in scaled high-��/metal-gate MOSFETs - The role of defect coupling under DC/AC condition. 2013-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。