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	Self-compliance multilevel resistive switching characteristics in TiN/HfOx/Al/Pt RRAM devices
	Hou, Y. ; Chen, B. ; Gao, B. ; Lun, Z.Y. ; Xin, Z. ; Liu, R. ; Liu, L.F. ; Han, D.D. ; Wang, Y. ; Liu, X.Y. ; Kang, J.F.
	2013
英文摘要	TiN/HfOx/Al/Pt resistive switching random access memory (RRAM) devices were fabricated and investigated. The HfOx based RRAM with Al inserted layer showed bipolar resistive switching phenomenon. As a result of the improvement of uniformity contributed by Al atoms' diffusion into HfO x film, robust self-compliance multilevel operation during set and reset process was reported. The possible mechanism was also discussed. ? 2013 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/EDSSC.2013.6628050
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294366]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Hou, Y.,Chen, B.,Gao, B.,et al. Self-compliance multilevel resistive switching characteristics in TiN/HfOx/Al/Pt RRAM devices. 2013-01-01.

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