Highly sensitive local curvature metrology for internal stress detection in thin films

CORC > 北京大学 > 信息科学技术学院

	Highly sensitive local curvature metrology for internal stress detection in thin films
	Wang, Shasha ; Chen, Jing ; Li, Dachao ; Huang, Yubo ; Li, Zhihong
刊名	pan tao ti hsueh paochinese journal of semiconductors
	2006
英文摘要	Novel local curvature test structures combined with a sub-nanometer optical interferometry measurement setup are developed to detect stresses in nanometer-scale films and ultra low stresses in thin films. Several localized test structures based on the bending plate measurement method are designed to improve its sensitivity and accuracy. FEM analysis is performed to calculate the deviation of boundary-introduced stress from that predicted by the Stoney formula. Optimized structures are fabricated with anisotropic etching and DRIE. Stress values obtained with this metrology are in good agreement with those extracted by other methods, and repeatability within 1% is achieved. Stress differences as small as 1.5 MPa in the 30 nm film can be resolved. Such resolution is among the finest in the world.; EI; 0; 6; 1129-1135; 27
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294266]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Shasha,Chen, Jing,Li, Dachao,et al. Highly sensitive local curvature metrology for internal stress detection in thin films[J]. pan tao ti hsueh paochinese journal of semiconductors,2006.
APA	Wang, Shasha,Chen, Jing,Li, Dachao,Huang, Yubo,&Li, Zhihong.(2006).Highly sensitive local curvature metrology for internal stress detection in thin films.pan tao ti hsueh paochinese journal of semiconductors.
MLA	Wang, Shasha,et al."Highly sensitive local curvature metrology for internal stress detection in thin films".pan tao ti hsueh paochinese journal of semiconductors (2006).