Experimental study on the footing effect for SOG structures using DRIE

CORC > 北京大学 > 信息科学技术学院

	Experimental study on the footing effect for SOG structures using DRIE
	Ding, Haitao ; Yang, Zhenchuan ; Zhang, Meili ; Yan, Guizhen
刊名	pan tao ti hsueh paochinese journal of semiconductors
	2008
英文摘要	This paper experimentally studies the effects of the conductivity of a silicon wafer and the gap height between silicon structures and glass substrate on the footing effect for silicon on glass (SOG) structures in the deep reactive ion etching (DRIE) process. Experiments with gap heights of 5, 20, and 50 ??m were carried out for performance comparison of the footing effect. Also, two kinds of silicon wafers with resistivity of 2-4 and 0.01-0.03 ??·cm were used for the exploration. The results show that structures with resistivity of 0.01-0.03 ??·cm have better topography than those with resistivity of 2-4 ??and structures with 50 ??m-high gaps between silicon structures and glass substrate suffer somewhat less of a footing effect than those with 20 ??m-high gaps, and much less than those with 5 ??m-high gaps. Our theoretical analysis indicates that either the higher conductivity of the silicon wafer or a larger gap height between silicon structures and glass substrate can suppress footing effects. The results can contribute to the choice of silicon type and optimum design for many microsensors.; EI; 0; 6; 1088-1093; 29
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294167]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Ding, Haitao,Yang, Zhenchuan,Zhang, Meili,et al. Experimental study on the footing effect for SOG structures using DRIE[J]. pan tao ti hsueh paochinese journal of semiconductors,2008.
APA	Ding, Haitao,Yang, Zhenchuan,Zhang, Meili,&Yan, Guizhen.(2008).Experimental study on the footing effect for SOG structures using DRIE.pan tao ti hsueh paochinese journal of semiconductors.
MLA	Ding, Haitao,et al."Experimental study on the footing effect for SOG structures using DRIE".pan tao ti hsueh paochinese journal of semiconductors (2008).