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	Structural and electrical properties of CeO2/Si with nitrided interfacial layer by nitrogen ion beam bombardment
	Kang, JF ; Liu, XY ; Han, RQ ; Wang, YY ; Lian, GJ ; Xun, K ; Yu, DP ; Xiong, GC ; Wu, SC ; Wang, YG
	2001
关键词	RELIABILITY
英文摘要	The effects of nitrided interfacial layer between CeO2-Si on the interfacial properties are studied. The process of nitrogen ion beam bombardment (NIBB) was used to form the nitride dielectric-Si interface. The CeO2 high-k dielectric films were grown on Si(100) substrates by pulsed laser deposition (PLD) and the capacitors with Pt/CeO2/Si structure were fabricated. The atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM), capacitance-voltage (C-V), and current-voltage (I-V) methods were used to study the interfacial characteristics of the samples, The results showed that a SiNxOy layer was formed on Si surface by the NIBB process. The nitride layer between CeO2 and Si can suppress the further formation of interfacial layer between CeO2 and Si, which is helpful to improve the structural and electrical characteristics of CeO2-Si interface.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000174745900070&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293947]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Kang, JF,Liu, XY,Han, RQ,et al. Structural and electrical properties of CeO2/Si with nitrided interfacial layer by nitrogen ion beam bombardment. 2001-01-01.

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