| The effect of calcination temperature on nanosized tin oxide thin film | |
| Liu, XD ; Zhang, DC ; Li, T ; Wei, W ; Dayu, T ; Kui, L | |
| 2004 | |
| 关键词 | tin oxide thin film sputtering GAS SENSOR |
| 英文摘要 | The effect of calcination on nanosized tin oxide film prepared by direct current reactive magnetron sputtering is investigated. The tin oxide semiconductors were calcined at different temperature ranging from 400 degrees C to 900 degrees C. The testing results from SEM, XRD, XPS and HP4145B semiconductor analyzer show that the composition, crystallinity and the resistance of the thin films change with the variation of calcination temperature.; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter; CPCI-S(ISTP); 0 |
| 语种 | 英语 |
| 内容类型 | 其他 |
| 源URL | [http://ir.pku.edu.cn/handle/20.500.11897/293786]  |
| 专题 | 信息科学技术学院 |
| 推荐引用方式 GB/T 7714 | Liu, XD,Zhang, DC,Li, T,et al. The effect of calcination temperature on nanosized tin oxide thin film. 2004-01-01. |
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