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	Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation
	Liu, XY ; Du, G ; Xia, ZL ; Kang, JF ; Wang, Y ; Han, RQ ; Yu, HY ; Li, MF ; Kwong, DL
	2004
关键词	Monte Carlo GOI scaling quantum effect TRANSPORT SEMICONDUCTORS DEVICES
英文摘要	The characteristics of both n- and p- GOI MOSFETs are simulated by 2D self-consistent full-band MC method based on quantum Boltzmann equation to evaluate the scaling behaviors between GOI and SOI MOSFETs. The simulation,ition results indicate that both for n- and p channel GOI MOSFETs have favorable scaling properties in nano-scale due to the non-stationary,, transport near source side especially for p channel device. But the surface roughness scattering is a critical issue that might suppress the non-stationary transport. SCE is serious in COI devices and much thinner Ge layer has to use to optimize the performance.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000227342201095&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293757]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, XY,Du, G,Xia, ZL,et al. Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation. 2004-01-01.

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