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	A novel technique of Silicon-on-Nothing MOSFETs fabrication by hydrogen and helium co-implantation
	Bu, WH ; Huang, R ; Li, M ; Tian, Y ; Wang, YY
	2004
英文摘要	In this paper a novel technique of Silicon-on-Nothing (SON) MOSFETs fabrication by H+ and He+ co-implantation is presented for the first time. This in-house technique is compatible with conventional CMOS technology and it can greatly alleviate the problems existing in the known techniques of SON devices. SON nMOSFETs with 50nm gate length have been fabricated and demonstrated in this paper. With the same process condition.. SON MOSFETs exhibit better performance than the corresponding bulk silicon. MOSFETs.; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293732]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Bu, WH,Huang, R,Li, M,et al. A novel technique of Silicon-on-Nothing MOSFETs fabrication by hydrogen and helium co-implantation. 2004-01-01.

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