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	Novel Schottky barrier MOSFET with dual-layer silicide source/drain structure
	Li, DY ; Sun, L ; Xia, ZL ; Zhang, SD ; Liu, XY ; Kang, JF ; Han, RQ
	2004
关键词	TRANSISTORS
英文摘要	A novel n-channel Schottky barrier MOSFET with dual-layer silicide source/drain (DS-SB-MOSFET) has been proposed for nanoscale application. In this device, the stacked source and drain of SB-MOSFET are composed with two metal silicide layers. The Schottky barrier height of the top silicide/channel contact is lower than that of the bottom silicide/channel contact. The low Schottky, barrier height of top silicide/channel contact near the gate oxide improves the electron injection capability in on-state. And the high Schottky barrier height of the bottom silicide/channel contact below the top silicide layer reduces the leakage current in off-state. Simulations indicated that the performance of DS-SB-MOSFET has been significantly improved, compared with that of the conventional Schottky barrier MOSFET (SB-MOSFET).; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293725]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, DY,Sun, L,Xia, ZL,et al. Novel Schottky barrier MOSFET with dual-layer silicide source/drain structure. 2004-01-01.

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