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	Study on the impact of Ge-implantation on the work function of fully silicided NiSi gate as ultra-shallow junction formed by using germanium preamorphization
	Cai, YM ; Xu, C ; Shan, XN ; Huang, R ; Wang, YY
	2005
关键词	POLY-SI
英文摘要	In this paper the impact of Ge-implantation on the work function of fully silicided NiSi gate is investigated. C-V measurement shows that work functions of NiSi gates with and without Ge implantation vary slightly, from 4.759eV to 4.729eV. The increase of interface state and fixed oxide charge introduced by Ge preamorphization implantation is not observed. These results demonstrate that fully silicided NiSi gate technology can be integrated with Ge preamorphization implantation in self alignment CMOS process.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000234932500006&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Condensed Matter; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293632]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Cai, YM,Xu, C,Shan, XN,et al. Study on the impact of Ge-implantation on the work function of fully silicided NiSi gate as ultra-shallow junction formed by using germanium preamorphization. 2005-01-01.

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