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	Impact of Strain on the Performance of Ge-Si Core-Shell Nanowire Field Effect Transistors
	He, Yuhui ; Zhao, Yuning ; Yu, Shimeng ; Fan, Chun ; Du, Gang ; Kang, Jinfeng ; Han, Ruqi ; Liu, Xiaoyan
	2008
关键词	HETEROSTRUCTURES
英文摘要	The performances of Ge-Si core-shell nanowire field effect transistors are evaluated based on a semiclassical ballistic transport model and a phonon-limit model. The valence band structures of Ge-Si core-shell nanowires are calculated by using a k.p method including the strain effect. Three new findings are presented: 1) Strain induces the top valence subbands of Ge core moving-up and substantial band warping; 2) at ballistic transport limit, strain-dependence of current is structure dependence. The strain can remarkably enhance current, but the enhancement can be suppressed by electrostatic effect; 3) at phonon scattering limit, strain causes the enhancement of hole effective mobility of the NW FETs, reaching about 260% at low effective electrical field.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000265829300042&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; CPCI-S(ISTP); 5
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293510]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Yuhui,Zhao, Yuning,Yu, Shimeng,et al. Impact of Strain on the Performance of Ge-Si Core-Shell Nanowire Field Effect Transistors. 2008-01-01.

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